NTD20N03L27

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.26pF @ 25V

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

18.9nC @ 10V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.031Ohm

Rds On (Max) @ Id, Vgs :

27m Ω @ 10A, 5V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

60A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

20A

Surface Mount :

yes

Vgs (Max) :

±20V

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

288 mJ

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

1.75W Ta 74W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED