NTD20N06G
- Mfr.Part #
- NTD20N06G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A DPAK
- Stock
- 7,416
- In Stock :
- 7,416
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 10A, 10V
- Rise Time :
- 60.5ns
- Power Dissipation-Max :
- 1.88W Ta 60W Tj
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 1015pF @ 25V
- Threshold Voltage :
- 2.91V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Power Dissipation :
- 60W
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Continuous Drain Current (ID) :
- 20A
- Turn-Off Delay Time :
- 27.1 ns
- Fall Time (Typ) :
- 37.1 ns
- Current Rating :
- 20A
- Voltage - Rated DC :
- 60V
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- NTD20N06G

N-Channel Tube 46m Ω @ 10A, 10V ±20V 1015pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N06G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1015pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 27.1 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.91V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
NTD20N06G Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27.1 ns
a threshold voltage of 2.91V
NTD20N06G Applications
There are a lot of ON Semiconductor
NTD20N06G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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