NTD20N06G

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Mfr.Part #
NTD20N06G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 20A DPAK
Stock
7,416
In Stock :
7,416

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Pin Count :
3
Element Configuration :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
46m Ω @ 10A, 10V
Rise Time :
60.5ns
Power Dissipation-Max :
1.88W Ta 60W Tj
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Pbfree Code :
yes
Published :
2010
Input Capacitance (Ciss) (Max) @ Vds :
1015pF @ 25V
Threshold Voltage :
2.91V
Vgs (Max) :
±20V
Number of Elements :
1
Power Dissipation :
60W
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
20A Ta
Continuous Drain Current (ID) :
20A
Turn-Off Delay Time :
27.1 ns
Fall Time (Typ) :
37.1 ns
Current Rating :
20A
Voltage - Rated DC :
60V
FET Type :
N-Channel
REACH SVHC :
No SVHC
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Drain to Source Breakdown Voltage :
60V
Datasheets
NTD20N06G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD20N06G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, NTD20N06G pinout, NTD20N06G datasheet PDF, NTD20N06G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD20N06G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD20N06G


N-Channel Tube 46m Ω @ 10A, 10V ±20V 1015pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD20N06G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1015pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 27.1 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.91V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

NTD20N06G Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27.1 ns
a threshold voltage of 2.91V


NTD20N06G Applications


There are a lot of ON Semiconductor
NTD20N06G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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