NTD20N03L27T4G
- Mfr.Part #
- NTD20N03L27T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A DPAK
- Stock
- 27,563
- In Stock :
- 27,563
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 10A, 5V
- Width :
- 6.22mm
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 137ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 30V
- Current Rating :
- 20A
- Power Dissipation :
- 74W
- Nominal Vgs :
- 1.6 V
- Drain to Source Breakdown Voltage :
- 30V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Turn On Delay Time :
- 17 ns
- Pbfree Code :
- yes
- Height :
- 2.38mm
- Power Dissipation-Max :
- 1.75W Ta 74W Tc
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 38 ns
- Avalanche Energy Rating (Eas) :
- 288 mJ
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Case Connection :
- DRAIN
- Published :
- 2004
- Continuous Drain Current (ID) :
- 20A
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 18.9nC @ 10V
- Resistance :
- 27mOhm
- Threshold Voltage :
- 1.6V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 31 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Length :
- 6.73mm
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Datasheets
- NTD20N03L27T4G

N-Channel Cut Tape (CT) 27m Ω @ 10A, 5V ±20V 1260pF @ 25V 18.9nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N03L27T4G Description
NTD20N03L27T4G is a 30v Single N-Channel Logic Level Power MOSFET. The onsemi NTD20N03L27T4G is a general-purpose part that provides the "best of design" available today in a low-cost power package. Avalanche energy issues make this part an ideal design. The drain-to-source diode has an ideal fast but soft recovery. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD20N03L27T4G is in the TO-252-3 package with 74W power dissipation.
NTD20N03L27T4G Features
-
Ultra-Low RDS(on), Single Base, Advanced Technology
-
SPICE Parameters Available
-
The diode is Characterized for Use in Bridge Circuits
-
IDSS and VDS(on) Specified at Elevated Temperature
-
High Avalanche Energy Specified
-
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
-
RoHS Compliant
NTD20N03L27T4G Applications
-
Power Supplies
-
Inductive Loads
-
PWM Motor Controls
-
Replaces MTD20N03L in many Applications
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