NTD20N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Factory Lead Time :

8 Weeks

Resistance :

37.5mOhm

Pulsed Drain Current-Max (IDM) :

60A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Fall Time (Typ) :

62 ns

Current Rating :

20A

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

48m Ω @ 10A, 5V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Turn On Delay Time :

9.6 ns

Power Dissipation :

60W

Pin Count :

3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Nominal Vgs :

1.6 V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.223mm

Power Dissipation-Max :

1.36W Ta 60W Tj

Continuous Drain Current (ID) :

20A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Number of Elements :

1

Length :

6.7056mm

Case Connection :

DRAIN

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Height :

2.2606mm

Element Configuration :

Single

Rise Time :

98ns

Drive Voltage (Max Rds On,Min Rds On) :

5V

Gate to Source Voltage (Vgs) :

15V

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Vgs (Max) :

±15V

Threshold Voltage :

1.6V

Published :

2005