NTD2955G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Mounting Type :

Surface Mount

Height :

2.38mm

Width :

6.22mm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-60V

Fall Time (Typ) :

48 ns

Voltage - Rated DC :

-60V

Continuous Drain Current (ID) :

12A

Length :

6.73mm

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Element Configuration :

Single

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Surface Mount :

yes

Resistance :

155mOhm

Threshold Voltage :

-2.8V

Turn-Off Delay Time :

26 ns

Power Dissipation :

55W

Operating Temperature :

-55°C~175°C TJ

Published :

2005

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Vgs (Max) :

±20V

ECCN Code :

EAR99

Current Rating :

-12A

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-2.8 V

Number of Elements :

1

Radiation Hardening :

No

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

55W Tj

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube