NTD25P03L1
- Mfr.Part #
- NTD25P03L1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 25A IPAK
- Stock
- 44,518
- In Stock :
- 44,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Lead Free :
- Contains Lead
- Current Rating :
- -25A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -30V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Pins :
- 4
- Vgs (Max) :
- ±15V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ) :
- 16 ns
- Continuous Drain Current (ID) :
- 25A
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Power Dissipation-Max :
- 75W Tj
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 25A, 5V
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Drain to Source Voltage (Vdss) :
- 30V
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 75W
- JESD-609 Code :
- e0
- Rise Time :
- 37ns
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Voltage - Rated DC :
- -30V
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 15V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.08Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Packaging :
- Tube
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 75A
- Datasheets
- NTD25P03L1

P-Channel Tube 80m Ω @ 25A, 5V ±15V 1260pF @ 25V 20nC @ 5V 30V TO-251-3 Short Leads, IPak, TO-251AA
NTD25P03L1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 1260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 25A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
NTD25P03L1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 75A.
a 30V drain to source voltage (Vdss)
NTD25P03L1 Applications
There are a lot of ON Semiconductor
NTD25P03L1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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