NTD25P03L1
- Mfr.Part #
- NTD25P03L1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 25A IPAK
- Stock
- 44,518
- In Stock :
- 44,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Pin Count :
- 4
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- -30V
- Drain-source On Resistance-Max :
- 0.08Ohm
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Fall Time (Typ) :
- 16 ns
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 25A, 5V
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs (Max) :
- ±15V
- Pulsed Drain Current-Max (IDM) :
- 75A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Rise Time :
- 37ns
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- -30V
- Gate to Source Voltage (Vgs) :
- 15V
- Surface Mount :
- No
- Pbfree Code :
- No
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Published :
- 2006
- Continuous Drain Current (ID) :
- 25A
- FET Type :
- P-Channel
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Current Rating :
- -25A
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 75W
- Power Dissipation-Max :
- 75W Tj
- Datasheets
- NTD25P03L1

P-Channel Tube 80m Ω @ 25A, 5V ±15V 1260pF @ 25V 20nC @ 5V 30V TO-251-3 Short Leads, IPak, TO-251AA
NTD25P03L1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 1260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 25A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
NTD25P03L1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 75A.
a 30V drain to source voltage (Vdss)
NTD25P03L1 Applications
There are a lot of ON Semiconductor
NTD25P03L1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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