NTD24N06T4G
- Mfr.Part #
- NTD24N06T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 24A DPAK
- Stock
- 41,999
- In Stock :
- 41,999
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 1.36W Ta 62.5W Tj
- Resistance :
- 36mOhm
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Width :
- 6.22mm
- Length :
- 6.73mm
- Power Dissipation :
- 62.5W
- Factory Lead Time :
- 17 Weeks
- Pbfree Code :
- yes
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Published :
- 2005
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 80A
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 27 ns
- Height :
- 2.38mm
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Current Rating :
- 24A
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 10A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 24A
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Rise Time :
- 24ns
- Turn-Off Delay Time :
- 25 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 24A Ta
- Datasheets
- NTD24N06T4G

N-Channel Tape & Reel (TR) 42m Ω @ 10A, 10V ±20V 1200pF @ 25V 48nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD24N06T4G Overview
The maximum input capacitance of this device is 1200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 24A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
NTD24N06T4G Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 80A.
NTD24N06T4G Applications
There are a lot of ON Semiconductor
NTD24N06T4G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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