NTD24N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

80A

Current - Continuous Drain (Id) @ 25°C :

24A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

162 mJ

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Number of Terminations :

2

Terminal Form :

Gull wing

Rise Time :

24ns

Voltage - Rated DC :

60V

Drain-source On Resistance-Max :

0.042Ohm

Packaging :

Tube

HTS Code :

8541.29.00.95

Pin Count :

3

Continuous Drain Current (ID) :

24A

Element Configuration :

Single

Published :

2005

Turn-Off Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

27A

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Current Rating :

24A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

42m Ω @ 10A, 10V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

27 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.36W Ta 62.5W Tj

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Power Dissipation :

62.5W

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

FET Type :

N-Channel