NTD23N03RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.14W Ta 22.3W Tc

Terminal Form :

Gull wing

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

3.76nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

240

Case Connection :

DRAIN

Terminal Position :

Single

DS Breakdown Voltage-Min :

25V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

3.8A

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta 17.1A Tc

Drain to Source Voltage (Vdss) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 20V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

40A

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

45m Ω @ 6A, 10V

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Mounting Type :

Surface Mount

Pbfree Code :

No

Terminal Finish :

TIN LEAD