NTD23N03RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

3.76nC @ 4.5V

Rds On (Max) @ Id, Vgs :

45m Ω @ 6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.06Ohm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

3.8A

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

1.14W Ta 22.3W Tc

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Position :

Single

Transistor Application :

SWITCHING

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

40A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta 17.1A Tc

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

25V

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 20V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

25V

Transistor Element Material :

SILICON