NTD23N03R
- Mfr.Part #
- NTD23N03R
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 3.8A/17.1A DPAK
- Stock
- 3,504
- In Stock :
- 3,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1.14W Ta 22.3W Tc
- JESD-609 Code :
- e0
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 6A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2009
- Lead Free :
- Contains Lead
- Pulsed Drain Current-Max (IDM) :
- 40A
- Turn-Off Delay Time :
- 9.9 ns
- Drain-source On Resistance-Max :
- 0.06Ohm
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 17.1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.76nC @ 4.5V
- Power Dissipation :
- 22.3W
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Current Rating :
- 23A
- Peak Reflow Temperature (Cel) :
- 240
- Case Connection :
- DRAIN
- HTS Code :
- 8541.29.00.95
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Ta 17.1A Tc
- Number of Elements :
- 1
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- NTD23N03R

N-Channel Tube 45m Ω @ 6A, 10V ±20V 225pF @ 20V 3.76nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD23N03R Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 225pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17.1A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [9.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
NTD23N03R Features
a continuous drain current (ID) of 17.1A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9.9 ns
based on its rated peak drain current 40A.
NTD23N03R Applications
There are a lot of ON Semiconductor
NTD23N03R applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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