NTD23N03R-001
- Mfr.Part #
- NTD23N03R-001
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 3.8A/17.1A IPAK
- Stock
- 25,065
- In Stock :
- 25,065
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 17.1A
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 9.9 ns
- Mount :
- Through Hole
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Ta 17.1A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 3.76nC @ 4.5V
- Current Rating :
- 23A
- Power Dissipation-Max :
- 1.14W Ta 22.3W Tc
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 6A, 10V
- Drain to Source Breakdown Voltage :
- 25V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2009
- Rise Time :
- 14.9ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 20V
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- 25V
- Power Dissipation :
- 22.3W
- Datasheets
- NTD23N03R-001

N-Channel Tube 45m Ω @ 6A, 10V ±20V 225pF @ 20V 3.76nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA
NTD23N03R-001 Overview
A device's maximum input capacitance is 225pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
NTD23N03R-001 Features
a continuous drain current (ID) of 17.1A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9.9 ns
NTD23N03R-001 Applications
There are a lot of ON Semiconductor
NTD23N03R-001 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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