NTD20P06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

90ns

Voltage - Rated DC :

-60V

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Published :

2005

Number of Terminations :

2

Number of Pins :

3

Resistance :

130mOhm

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

5V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

50A

Drain to Source Breakdown Voltage :

-60V

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

-1.5 V

Turn On Delay Time :

11 ns

Pbfree Code :

yes

Contact Plating :

Tin

Element Configuration :

Single

Number of Elements :

1

Current Rating :

-15A

FET Type :

P-Channel

Length :

6.73mm

Fall Time (Typ) :

70 ns

Height :

2.38mm

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

28 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

15.5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

65W Tc

Current - Continuous Drain (Id) @ 25°C :

15.5A Ta

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 5V

Power Dissipation :

65W

Threshold Voltage :

-1.5V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Surface Mount :

yes