NTD20N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.88W Ta 60W Tj

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Current Rating :

20A

Length :

10.29mm

Power Dissipation :

60W

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Number of Terminations :

2

Threshold Voltage :

2.91V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

37.1 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

1015pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Resistance :

37.5mOhm

Height :

4.83mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

27.1 ns

Pbfree Code :

yes

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Voltage - Rated DC :

60V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Surface Mount :

yes

Published :

2005

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Case Connection :

DRAIN

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

46m Ω @ 10A, 10V

Turn On Delay Time :

9.5 ns

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Rise Time :

60.5ns

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

-55°C~175°C TJ