NTD18N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

72 mJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

54A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Elements :

1

Pbfree Code :

yes

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

18A

Drain-source On Resistance-Max :

0.06Ohm

Rds On (Max) @ Id, Vgs :

60m Ω @ 9A, 10V

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.1W Ta 55W Tj