NTD110N02RT4
- Mfr.Part #
- NTD110N02RT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 12.5A/110A DPAK
- Stock
- 4,800
- In Stock :
- 4,800
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 24V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current Rating :
- 110A
- Number of Pins :
- 4
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Resistance :
- 4.1mOhm
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 3440pF @ 20V
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta 110A Tc
- Pin Count :
- 4
- Nominal Vgs :
- 1.5 V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 110A
- Power Dissipation-Max :
- 1.5W Ta 110W Tc
- Power Dissipation :
- 2.88W
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 11 ns
- Number of Terminations :
- 2
- Factory Lead Time :
- 2 Weeks
- Turn-Off Delay Time :
- 27 ns
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 21 ns
- Drain to Source Breakdown Voltage :
- 24V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 39ns
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 20A, 10V
- Drain Current-Max (Abs) (ID) :
- 32A
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- FET Type :
- N-Channel
- Published :
- 2011
- Datasheets
- NTD110N02RT4

N-Channel Tape & Reel (TR) 4.6m Ω @ 20A, 10V ±20V 3440pF @ 20V 28nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD110N02RT4G Description
Channel power NTD110N02RT4G refers to the ability of any channel member to change or change the behavior of other members in the distribution channel because of its relatively strong position in the market.
NTD110N02RT4G Features
? Planar HD3e Process for Fast Switching Performance
? Low RDS(on) to Minimize Conduction Loss
? Low Ciss to Minimize Driver Loss
? Low Gate Charge
? Optimized for High Side Switching Requirements in
High?Efficiency DC?DC Converters
? S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NTD110N02RT4G Applications
High Side Switching Requirements
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