NTD110N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 20V

Fall Time (Typ) :

21 ns

Nominal Vgs :

1.5 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Resistance :

4.1mOhm

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Application :

SWITCHING

Current Rating :

110A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

24V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Terminal Form :

Gull wing

Published :

2011

Drain Current-Max (Abs) (ID) :

32A

Voltage - Rated DC :

24V

Pbfree Code :

yes

Number of Pins :

4

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 110A Tc

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Rise Time :

39ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

JESD-609 Code :

e3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.5W Ta 110W Tc

Power Dissipation :

2.88W

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

110A

Lead Free :

Lead Free

Vgs (Max) :

±20V

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin