NTD110N02RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Pulsed Drain Current-Max (IDM) :

110A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

1.5W Ta 110W Tc

Avalanche Energy Rating (Eas) :

120 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tube

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 110A Tc

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3.44pF @ 20V

DS Breakdown Voltage-Min :

24V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.0062Ohm

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Pin Count :

3

Drain Current-Max (Abs) (ID) :

12.5A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

24V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Number of Terminations :

2

FET Type :

N-Channel