NTD14N03R-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

11.4A

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

95m Ω @ 5A, 10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

1.04W Ta 20.8W Tc

Terminal Finish :

Tin (Sn)

Published :

2007

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 20V

JESD-609 Code :

e3

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

25V

Current Rating :

14A

Continuous Drain Current (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

27ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Pin Count :

3

Turn-Off Delay Time :

9.6 ns

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

FET Type :

N-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.13Ohm

JESD-30 Code :

R-PSIP-T3

Mount :

Through Hole

Fall Time (Typ) :

27 ns

Packaging :

Tube

Number of Terminations :

3

Power Dissipation :

1.56W

Pulsed Drain Current-Max (IDM) :

28A

Voltage - Rated DC :

25V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 5V