NTD110N02R-001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3.44pF @ 20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain Current-Max (Abs) (ID) :

12.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Terminal Position :

Single

DS Breakdown Voltage-Min :

24V

Avalanche Energy Rating (Eas) :

120 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0062Ohm

Transistor Element Material :

SILICON

JESD-609 Code :

e0

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

110A

Packaging :

Tube

Qualification Status :

COMMERCIAL

Terminal Finish :

TIN LEAD

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

24V

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 110A Tc

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

1.5W Ta 110W Tc

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1