NTD12N10T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Rise Time :

30ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

36A

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation :

56.6W

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.28W Ta 56.6W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

165m Ω @ 6A, 10V

Element Configuration :

Single

Voltage - Rated DC :

100V

Current Rating :

12A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

240

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn80Pb20)

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.165Ohm

FET Type :

N-Channel

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Pin Count :

3

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

75 mJ

Turn-Off Delay Time :

22 ns

Continuous Drain Current (ID) :

12A

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2