NTD18N06LT4G
- Mfr.Part #
- NTD18N06LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 18A DPAK
- Stock
- 83,557
- In Stock :
- 83,557
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Vgs (Max) :
- ±15V
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Threshold Voltage :
- 1.8V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 9A, 5V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn-Off Delay Time :
- 19 ns
- Height :
- 2.38mm
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.1W Ta 55W Tj
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 675pF @ 25V
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 7 Weeks
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Radiation Hardening :
- No
- Power Dissipation :
- 55W
- Width :
- 6.22mm
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 18A
- Pbfree Code :
- yes
- Rise Time :
- 79ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 18A
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 54A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 38 ns
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 9.9 ns
- Gate to Source Voltage (Vgs) :
- 15V
- Resistance :
- 54mOhm
- Datasheets
- NTD18N06LT4G

N-Channel Tape & Reel (TR) 65m Ω @ 9A, 5V ±15V 675pF @ 25V 22nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06LT4G Description
NTD18N06LT4G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor, which is specifically designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls and bridge circuits. It is available in the DPAK package which provides a space-saving function.
NTD18N06LT4G Features
-
Low on-state resistance
-
Low gate charge
-
High dv/dt capability
-
Fast switching speed
-
Available in the DPAK package
NTD18N06LT4G Applications
-
Converters
-
Bridge circuits
-
Power supplies
-
Power motor controls
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