NTD18N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Number of Pins :

3

Power Dissipation-Max :

2.1W Ta 55W Tj

Power Dissipation :

55W

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

72 mJ

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Operating Temperature :

-55°C~175°C TJ

Rise Time :

79ns

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

54A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Turn On Delay Time :

9.9 ns

Fall Time (Typ) :

38 ns

Case Connection :

DRAIN

Lead Free :

Lead Free

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

1.8V

Height :

2.38mm

Factory Lead Time :

7 Weeks

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Resistance :

54mOhm

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±15V

Radiation Hardening :

No

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

15V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Additional Feature :

LOGIC LEVEL COMPATIBLE

Length :

6.73mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Current Rating :

18A

Number of Elements :

1

Number of Terminations :

2

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA