NTD18N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

7 Weeks

Height :

2.38mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Width :

6.22mm

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current Rating :

18A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

5V

Element Configuration :

Single

Fall Time (Typ) :

38 ns

Pbfree Code :

yes

Contact Plating :

Tin

Pin Count :

3

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

72 mJ

Turn-Off Delay Time :

19 ns

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Power Dissipation :

55W

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

18A

Terminal Form :

Gull wing

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9.9 ns

Power Dissipation-Max :

2.1W Ta 55W Tj

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

54A

Gate to Source Voltage (Vgs) :

15V

Published :

2005

Length :

6.73mm

Resistance :

54mOhm

Rise Time :

79ns

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes