NTD18N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

18A Ta

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Width :

6.22mm

Current Rating :

18A

Threshold Voltage :

1.8V

Factory Lead Time :

7 Weeks

Power Dissipation-Max :

2.1W Ta 55W Tj

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Terminations :

2

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

18A

Resistance :

54mOhm

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

15V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±15V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

5V

Avalanche Energy Rating (Eas) :

72 mJ

ECCN Code :

EAR99

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Contact Plating :

Tin

Turn-Off Delay Time :

19 ns

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Case Connection :

DRAIN

Pbfree Code :

yes

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn On Delay Time :

9.9 ns

Transistor Element Material :

SILICON

Power Dissipation :

55W

Fall Time (Typ) :

38 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

54A

Length :

6.73mm

Rise Time :

79ns

Lead Free :

Lead Free

Height :

2.38mm

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC