NTD18N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

18A

Number of Pins :

3

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

72 mJ

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Rise Time :

23ns

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

19 ns

FET Type :

N-Channel

Power Dissipation :

55W

Pulsed Drain Current-Max (IDM) :

54A

Drain-source On Resistance-Max :

0.06Ohm

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Power Dissipation-Max :

2.1W Ta 55W Tj

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Current Rating :

18A

Fall Time (Typ) :

20 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Packaging :

Tube

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

60m Ω @ 9A, 10V