NTB6N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

2

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Terminal Form :

Gull wing

Product Status :

Active

Continuous Drain Current (ID) :

6 A

Package :

Bulk

Manufacturer :

Rochester Electronics LLC

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

600 V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

1.2 Ω

Series :

*

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Terminal Finish :

TIN LEAD

Pbfree Code :

yes

Pin Count :

3

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

450 mJ

RoHS :

Compliant

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

21 A