NTB6411ANG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

470 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

285A

Drain-source On Resistance-Max :

0.014Ohm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

217W Tc

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

14m Ω @ 72A, 10V

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

3.7pF @ 25V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

72A

Number of Terminations :

2

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

100V