NTB60N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Height :

4.83mm

Current Rating :

60A

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Fall Time (Typ) :

142.5 ns

Transistor Element Material :

SILICON

Length :

10.29mm

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Rise Time :

180.7ns

Power Dissipation :

150W

Terminal Form :

Gull wing

FET Type :

N-Channel

Width :

9.65mm

Avalanche Energy Rating (Eas) :

454 mJ

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.85V

Continuous Drain Current (ID) :

60A

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

94.5 ns

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

16mOhm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

60V

Number of Pins :

3

Number of Elements :

1

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

REACH SVHC :

No SVHC

Published :

2005

Turn On Delay Time :

25.5 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Number of Terminations :

2

Power Dissipation-Max :

2.4W Ta 150W Tj

Packaging :

Tape and Reel (TR)