NTB6413ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Element Configuration :

Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Contact Plating :

Tin

Vgs (Max) :

±20V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

136W

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

52 ns

Resistance :

28mOhm

Published :

1999

Turn On Delay Time :

13 ns

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

71 ns

Terminal Form :

Gull wing

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Continuous Drain Current (ID) :

42A

Power Dissipation-Max :

136W Tc

Number of Pins :

3

Avalanche Energy Rating (Eas) :

200 mJ

Height :

4.83mm

Pbfree Code :

yes

Width :

9.65mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

28m Ω @ 42A, 10V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Length :

10.29mm

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

84ns