NTB60N06LT4G
- Mfr.Part #
- NTB60N06LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A D2PAK
- Stock
- 117
- In Stock :
- 117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Ta
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 2.4W Ta 150W Tj
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 30A, 5V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.075pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Supplier Device Package :
- D2PAK
- Vgs (Max) :
- ±15V
- Datasheets
- NTB60N06LT4G

N-Channel Tape & Reel (TR) 16mOhm @ 30A, 5V ±15V 3.075pF @ 25V 65nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB60N06LT4G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.075pF @ 25V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.
NTB60N06LT4G Features
a 60V drain to source voltage (Vdss)
NTB60N06LT4G Applications
There are a lot of Rochester Electronics, LLC
NTB60N06LT4G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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