NTB65N02RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

60 mJ

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

7.6A

Drain to Source Voltage (Vdss) :

25V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0105Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Surface Mount :

yes

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 30A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.33pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

25V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

160A

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Pbfree Code :

yes