NTB65N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

14 ns

Case Connection :

DRAIN

Voltage - Rated DC :

24V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Voltage (Vdss) :

25V

Drain Current-Max (Abs) (ID) :

7.6A

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

2

Rise Time :

53ns

Drain-source On Resistance-Max :

0.0105Ohm

Transistor Element Material :

SILICON

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

160A

Power Dissipation :

62.5W

Number of Elements :

1

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Continuous Drain Current (ID) :

65A

Drain to Source Breakdown Voltage :

24V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

65A

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

60 mJ

Published :

2012

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Peak Reflow Temperature (Cel) :

240

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30