NTB65N02RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0105Ohm

Drain Current-Max (Abs) (ID) :

7.6A

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

160A

Turn-Off Delay Time :

14 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

ECCN Code :

EAR99

Pin Count :

3

Avalanche Energy Rating (Eas) :

60 mJ

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 30A, 10V

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Number of Elements :

1

Drain to Source Breakdown Voltage :

24V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Continuous Drain Current (ID) :

65A

Power Dissipation :

62.5W

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Published :

2008

Lead Free :

Lead Free

Current Rating :

65A

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Number of Terminations :

2

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified