NTB65N02R
- Mfr.Part #
- NTB65N02R
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 65A D2PAK
- Stock
- 39,889
- In Stock :
- 39,889
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 65A
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 7.6A
- Drain-source On Resistance-Max :
- 0.0105Ohm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 235
- Turn-Off Delay Time :
- 14 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 24V
- Rds On (Max) @ Id, Vgs :
- 8.2m Ω @ 30A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 160A
- Published :
- 2009
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.95
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 20V
- Power Dissipation-Max :
- 1.04W Ta 62.5W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 62.5W
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 65A
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Datasheets
- NTB65N02R

N-Channel Tube 8.2m Ω @ 30A, 10V ±20V 1330pF @ 20V 9.5nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB65N02R Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 1330pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 65A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=24V, and this device has a drain-to-source breakdown voltage of 24V voltage.Its drain current is 7.6A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTB65N02R Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 14 ns
based on its rated peak drain current 160A.
NTB65N02R Applications
There are a lot of ON Semiconductor
NTB65N02R applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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