NSBC124XPDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F6

Terminal Form :

Flat

Operating Temperature (Max) :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Published :

2008

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.14

Collector Emitter Breakdown Voltage :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Voltage - Rated DC :

50V

Number of Elements :

2

Mount :

Surface Mount

Base Part Number :

NSBC1*

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current Rating :

100mA

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

250mV

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

500mW

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN AND PNP

ECCN Code :

EAR99

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Resistor - Base (R1) :

22k Ω