NSBC123JDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

50V

Number of Terminations :

6

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Power Dissipation :

357mW

Transistor Application :

SWITCHING

Number of Pins :

6

hFE Min :

80

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Min Operating Temperature :

-55°C

Qualification Status :

Not Qualified

Resistor - Base (R1) :

2.2k Ω

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

NSBC1*

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Max Power Dissipation :

500mW

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Surface Mount :

yes

Package / Case :

SOT-563, SOT-666

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

250mV

Max Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

47k Ω

Published :

2012

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA