NSBC114YDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Power Dissipation :

357mW

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

100mA

Surface Mount :

yes

Package / Case :

SOT-563, SOT-666

Continuous Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.7

Resistor - Emitter Base (R2) :

47k Ω

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

NSBC1*

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Form :

Flat

Max Breakdown Voltage :

50V

Number of Pins :

6

Transistor Application :

SWITCHING

Number of Terminations :

6

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

500mW

Mounting Type :

Surface Mount

Contact Plating :

Tin

Number of Elements :

2

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Transistor Type :

2 NPN - Pre-Biased (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

6

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Published :

2006

Voltage - Rated DC :

50V

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

Max Collector Current :

100mA