NSBC114TDXV6
- Mfr.Part #
- NSBC114TDXV6
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.5W SOT563
- Stock
- 3,292
- In Stock :
- 3,292
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Dual
- Max Power Dissipation :
- 500mW
- Continuous Collector Current :
- 100mA
- Min Operating Temperature :
- -55°C
- Resistor - Base (R1) :
- 10k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 5mA 10V
- Factory Lead Time :
- 2 Weeks
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 50V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- NSBC1*
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- hFE Min :
- 160
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- ECCN Code :
- EAR99
- Power Dissipation :
- 357mW
- Number of Terminations :
- 6
- Number of Elements :
- 2
- Package / Case :
- SOT-563, SOT-666
- Pin Count :
- 6
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity :
- NPN
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 500nA
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Additional Feature :
- BUILT IN BIAS RESISTOR
- JESD-609 Code :
- e3
- Published :
- 2006
- Number of Pins :
- 6
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Mounting Type :
- Surface Mount
- Datasheets
- NSBC114TDXV6

NSBC114TDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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