NP40N10YDF-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

61 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Number of Terminations :

8

Drain-source On Resistance-Max :

0.036Ohm

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

40A

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

100V

Pin Count :

8

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Temperature :

175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Number of Elements :

1

Published :

2013

Terminal Position :

Dual

Package / Case :

8-PowerLDFN

Terminal Finish :

Pure Tin (Sn)

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Power Dissipation-Max :

1W Ta 120W Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

25m Ω @ 20A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA