NP40N10YDF-E1-AY
- Mfr.Part #
- NP40N10YDF-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 40A 8HSON
- Stock
- 6,722
- In Stock :
- 6,722
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3150pF @ 25V
- Published :
- 2013
- Pin Count :
- 8
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-PowerLDFN
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 61 mJ
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drain-source On Resistance-Max :
- 0.036Ohm
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Pure Tin (Sn)
- Power Dissipation-Max :
- 1W Ta 120W Tc
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Continuous Drain Current (ID) :
- 40A
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 20A, 10V
- Operating Temperature :
- 175°C TJ
- Datasheets
- NP40N10YDF-E1-AY
N-Channel Tape & Reel (TR) 25m Ω @ 20A, 10V ±20V 3150pF @ 25V 71nC @ 10V 100V 8-PowerLDFN
NP40N10YDF-E1-AY Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 61 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 40A.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NP40N10YDF-E1-AY Features
the avalanche energy rating (Eas) is 61 mJ
a continuous drain current (ID) of 40A
a 100V drain to source voltage (Vdss)
NP40N10YDF-E1-AY Applications
There are a lot of Renesas Electronics America
NP40N10YDF-E1-AY applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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