NP40N10VDF-E2-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

1.2W

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

61 mJ

Number of Terminations :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.037Ohm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Operating Temperature (Max) :

175°C

Drain Current-Max (Abs) (ID) :

40A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Terminal Position :

Single

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

Vendor Undefined