NP40N10VDF-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

1.2W

Published :

2013

DS Breakdown Voltage-Min :

100V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

40A

Pulsed Drain Current-Max (IDM) :

80A

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

24 Weeks

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Package / Case :

TO-252

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

61 mJ

Operating Temperature (Max) :

175°C