NP40N055KHE-E1-AY

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Mfr.Part #
NP40N055KHE-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
TRANSISTOR
Stock
14,469
In Stock :
14,469

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
Vendor Undefined
HTS Code :
8541.29.00.95
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Turn-Off Delay Time :
29 ns
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
100A
Packaging :
Tape and Reel (TR)
Pin Count :
3
Turn On Delay Time :
16 ns
Continuous Drain Current (ID) :
40A
Terminal Form :
Gull wing
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
55V
Fall Time (Typ) :
9.2 ns
Avalanche Energy Rating (Eas) :
49 mJ
Number of Terminations :
2
Polarity/Channel Type :
N-Channel
Min Operating Temperature :
-55°C
Power Dissipation-Max (Abs) :
66W
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature :
175°C
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Terminal Position :
Single
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20V
Published :
2007
Radiation Hardening :
No
Rise Time :
9.2ns
Number of Elements :
1
Datasheets
NP40N055KHE-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N055KHE-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, NP40N055KHE-E1-AY pinout, NP40N055KHE-E1-AY datasheet PDF, NP40N055KHE-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N055KHE-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

NP40N055KHE-E1-AY Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 49 mJ.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 29 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 55V.

NP40N055KHE-E1-AY Features


the avalanche energy rating (Eas) is 49 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 29 ns
based on its rated peak drain current 100A.


NP40N055KHE-E1-AY Applications


There are a lot of Renesas Electronics America
NP40N055KHE-E1-AY applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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