NP40N10PDF-E1-AY

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Mfr.Part #
NP40N10PDF-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 40A TO263
Stock
8,493
In Stock :
8,493

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
60 ns
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
100V
Terminal Form :
Gull wing
Operating Temperature :
175°C TJ
Fall Time (Typ) :
5 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Elements :
1
Factory Lead Time :
16 Weeks
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Power Dissipation-Max :
1.8W Ta 120W Tc
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
3150pF @ 25V
Avalanche Energy Rating (Eas) :
61 mJ
Mount :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HTS Code :
8541.29.00.95
Terminal Position :
Single
Published :
2013
Continuous Drain Current (ID) :
40A
Rise Time :
16ns
Turn On Delay Time :
15 ns
Drain to Source Voltage (Vdss) :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
80A
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
27m Ω @ 20A, 10V
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Datasheets
NP40N10PDF-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N10PDF-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, NP40N10PDF-E1-AY pinout, NP40N10PDF-E1-AY datasheet PDF, NP40N10PDF-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N10PDF-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP40N10PDF-E1-AY


N-Channel Tape & Reel (TR) 27m Ω @ 20A, 10V ±20V 3150pF @ 25V 71nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP40N10PDF-E1-AY Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 61 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3150pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NP40N10PDF-E1-AY Features


the avalanche energy rating (Eas) is 61 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 60 ns
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)


NP40N10PDF-E1-AY Applications


There are a lot of Renesas Electronics America
NP40N10PDF-E1-AY applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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