NP40N10PDF-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Power Dissipation-Max :

1.8W Ta 120W Tc

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs (Max) :

±20V

Pin Count :

3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

5 ns

Turn On Delay Time :

15 ns

Operating Temperature :

175°C TJ

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Qualification Status :

Not Qualified

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

100V

Mount :

Surface Mount

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

27m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

JESD-30 Code :

R-PSSO-G2

Rise Time :

16ns

Published :

2013

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

61 mJ

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

40A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

80A

Terminal Form :

Gull wing