NP40N10VDF-E1-AY

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Mfr.Part #
NP40N10VDF-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-252
Datasheet
Download
Description
MOSFET N-CH 100V 40A TO252
Stock
12,114
In Stock :
12,114

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
24 Weeks
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
40A
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
1.2W
Number of Elements :
1
DS Breakdown Voltage-Min :
100V
Qualification Status :
Not Qualified
Pin Count :
3
Terminal Form :
Gull wing
Package / Case :
TO-252
Packaging :
Tape and Reel (TR)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
61 mJ
Moisture Sensitivity Level (MSL) :
Vendor Undefined
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Published :
2013
Terminal Position :
Single
Surface Mount :
yes
Pulsed Drain Current-Max (IDM) :
80A
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Operating Temperature (Max) :
175°C
Datasheets
NP40N10VDF-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N10VDF-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252, Number of Pins:3, Number of Terminations:2, NP40N10VDF-E1-AY pinout, NP40N10VDF-E1-AY datasheet PDF, NP40N10VDF-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP40N10VDF-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP40N10VDF-E1-AY


Tape & Reel (TR) TO-252

NP40N10VDF-E1-AY Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 61 mJ (Eas).Drain current refers to the maximum continuous current a device can conduct, and it is 40A.Peak drain current is 80A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.

NP40N10VDF-E1-AY Features


the avalanche energy rating (Eas) is 61 mJ
based on its rated peak drain current 80A.


NP40N10VDF-E1-AY Applications


There are a lot of Renesas Electronics America
NP40N10VDF-E1-AY applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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