NP109N055PUJ-E2B-AY

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Mfr.Part #
NP109N055PUJ-E2B-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
TRANSISTOR
Stock
6,005
In Stock :
6,005

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0032Ohm
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
Vendor Undefined
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.95
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Pulsed Drain Current-Max (IDM) :
440A
DS Breakdown Voltage-Min :
40V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-263AB
Operating Temperature (Max) :
175°C
Drain Current-Max (Abs) (ID) :
110A
Avalanche Energy Rating (Eas) :
291 mJ
Published :
2009
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
yes
Number of Elements :
1
Terminal Form :
Gull wing
Terminal Position :
Single
JESD-609 Code :
e3
Power Dissipation-Max (Abs) :
220W
Number of Terminations :
2
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP109N055PUJ-E2B-AY from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, NP109N055PUJ-E2B-AY pinout, NP109N055PUJ-E2B-AY datasheet PDF, NP109N055PUJ-E2B-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP109N055PUJ-E2B-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

NP109N055PUJ-E2B-AY Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 291 mJ.Its drain current is 110A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 440A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 40V.

NP109N055PUJ-E2B-AY Features


the avalanche energy rating (Eas) is 291 mJ
based on its rated peak drain current 440A.


NP109N055PUJ-E2B-AY Applications


There are a lot of Renesas Electronics America
NP109N055PUJ-E2B-AY applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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