NP109N055PUJ-E2B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

HTS Code :

8541.29.00.95

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Published :

2009

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

110A

Operating Temperature (Max) :

175°C

JEDEC-95 Code :

TO-263AB

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max (Abs) :

220W

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

440A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

Vendor Undefined

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

291 mJ

Pin Count :

3

Drain-source On Resistance-Max :

0.0032Ohm

JESD-609 Code :

e3