NP109N055PUJ-E2B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0032Ohm

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

440A

DS Breakdown Voltage-Min :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-263AB

Operating Temperature (Max) :

175°C

Drain Current-Max (Abs) (ID) :

110A

Avalanche Energy Rating (Eas) :

291 mJ

Published :

2009

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Number of Elements :

1

Terminal Form :

Gull wing

Terminal Position :

Single

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

220W

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel