NP109N055PUJ-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Temperature :

175°C TJ

Current - Continuous Drain (Id) @ 25°C :

110A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 55A, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.8W Ta 220W Tc

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.0032Ohm

Power Dissipation :

1.8W

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N-Channel

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

40V

Radiation Hardening :

No

Published :

2009

Number of Elements :

1

Continuous Drain Current (ID) :

110A

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

Turn On Delay Time :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

10 ns

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Rise Time :

20ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Pulsed Drain Current-Max (IDM) :

440A

Turn-Off Delay Time :

90 ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3