NP109N055PUJ-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

175°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

1.8W Ta 220W Tc

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

DS Breakdown Voltage-Min :

40V

Mount :

Surface Mount

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

110A Ta

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pin Count :

3

Published :

2009

Pulsed Drain Current-Max (IDM) :

440A

ECCN Code :

EAR99

Rise Time :

20ns

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0032Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 55A, 10V

Continuous Drain Current (ID) :

110A

Radiation Hardening :

No

Turn On Delay Time :

40 ns

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

1.8W

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

90 ns