NP109N055PUJ-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PSSO-G2

Rise Time :

20ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.8W Ta 220W Tc

Turn-Off Delay Time :

90 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 55A, 10V

Power Dissipation :

1.8W

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

FET Type :

N-Channel

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0032Ohm

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Operating Temperature :

175°C TJ

Current - Continuous Drain (Id) @ 25°C :

110A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

110A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Form :

Gull wing

Turn On Delay Time :

40 ns

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2009

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Number of Elements :

1

Pin Count :

3

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

440A

Radiation Hardening :

No

DS Breakdown Voltage-Min :

40V