NP100P06PLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0078Ohm

ECCN Code :

EAR99

Terminal Position :

Single

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Continuous Drain Current (ID) :

100A

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Fall Time (Typ) :

100 ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.8W

Turn-Off Delay Time :

275 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

420 mJ

Mount :

Surface Mount

Published :

2007

Number of Elements :

1

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.8W Ta 200W Tc

FET Type :

P-Channel

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

300A

Operating Temperature :

175°C TJ

Turn On Delay Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)