NP109N04PUJ-E2B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

440A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

110A

Drain-source On Resistance-Max :

0.0023Ohm

Packaging :

Tape and Reel (TR)

Pin Count :

3

Published :

2009

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Transistor Application :

SWITCHING

Number of Terminations :

2

Operating Temperature (Max) :

175°C

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

360 mJ

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max (Abs) :

220W

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Position :

Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified