NP109N04PUJ-E2B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Polarity/Channel Type :

N-Channel

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Transistor Element Material :

SILICON

Pin Count :

3

Operating Temperature (Max) :

175°C

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max (Abs) :

220W

Avalanche Energy Rating (Eas) :

360 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

110A

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0023Ohm

Pulsed Drain Current-Max (IDM) :

440A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Surface Mount :

yes

DS Breakdown Voltage-Min :

40V