NP109N04PUJ-E2B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

JEDEC-95 Code :

TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Pulsed Drain Current-Max (IDM) :

440A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Vendor Undefined

HTS Code :

8541.29.00.95

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.0023Ohm

Operating Temperature (Max) :

175°C

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

110A

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

220W

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

360 mJ

DS Breakdown Voltage-Min :

40V

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Number of Terminations :

2

Terminal Form :

Gull wing

Transistor Element Material :

SILICON