NP109N04PUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 55A, 10V

Vgs (Max) :

±20V

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

90 ns

Number of Terminations :

2

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.8W Ta 220W Tc

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

440A

Fall Time (Typ) :

35 ns

FET Type :

N-Channel

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Application :

SWITCHING

Turn On Delay Time :

47 ns

Continuous Drain Current (ID) :

110A

Transistor Element Material :

SILICON

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

15750pF @ 25V

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0023Ohm

Lead Free :

Lead Free

Operating Temperature :

175°C TJ

Drain to Source Voltage (Vdss) :

40V