NP100P04PLG-E1-AY
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- Mfr.Part #
- NP100P04PLG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 100A TO263
- Stock
- 41,682
- In Stock ：
- 41,682
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 40V
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 15100pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 300A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 100A
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Rise Time :
- 30ns
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Fall Time (Typ) :
- 100 ns
- Turn On Delay Time :
- 38 ns
- Number of Elements :
- 1
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.8W Ta 200W Tc
- Turn-Off Delay Time :
- 300 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 50A, 10V
- Operating Temperature :
- 175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.8W
- Pin Count :
- 3
- Radiation Hardening :
- No
- Datasheets
- NP100P04PLG-E1-AY
P-Channel Tape & Reel (TR) 3.7m Ω @ 50A, 10V ±20V 15100pF @ 10V 320nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP100P04PLG-E1-AY Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 550 mJ.A device's maximum input capacitance is 15100pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 300 ns.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NP100P04PLG-E1-AY Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 300 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
NP100P04PLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP100P04PLG-E1-AY applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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