NJVMJD50T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

400V

Number of Pins :

3

Collector Emitter Saturation Voltage :

1V

Factory Lead Time :

22 Weeks

Max Collector Current :

1A

Transistor Element Material :

SILICON

Transition Frequency :

10MHz

Terminal Finish :

Tin (Sn)

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Pin Count :

3

Collector Emitter Voltage (VCEO) :

400V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Frequency :

10MHz

Operating Temperature :

-65°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

1.56W

Number of Terminations :

2

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gain Bandwidth Product :

10MHz

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Transistor Type :

NPN

Base Part Number :

MJD50

Max Power Dissipation :

1.56W

Current - Collector Cutoff (Max) :

200μA

ECCN Code :

EAR99

Surface Mount :

yes

Case Connection :

COLLECTOR

Element Configuration :

Single

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Collector Base Voltage (VCBO) :

500V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V