NJVMJD50T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Max Collector Current :

1A

Base Part Number :

MJD50

Collector Base Voltage (VCBO) :

500V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2010

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

200μA

Lead Free :

Lead Free

Pin Count :

3

Radiation Hardening :

No

Case Connection :

COLLECTOR

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Type :

NPN

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Max Power Dissipation :

1.56W

Frequency :

10MHz

Number of Elements :

1

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

1V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

400V

Factory Lead Time :

22 Weeks

Transition Frequency :

10MHz

Gain Bandwidth Product :

10MHz

Number of Pins :

3

Power Dissipation :

1.56W

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

400V

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)